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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION *With TO-3PML package *High speed *High breakdown voltage *High reliability APPLICATIONS *For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 Open emitter Open base Open collector CONDITIONS MAX 1500 800 6 6 3.0 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3756 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 800 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A ;IB=1A IC=4A ;IB=1A 5.0 V Base-emitter saturation voltage 1.5 V A ICBO Collector cut-off current VCB=800V ;IE=0 10 ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA A IEBO Emitter cut-off current VEB=4V ;IC=0 10 hFE-1 DC current gain IC=1A ; VCE=5V 8 36 hFE-2 DC current gain IC=4A ; VCE=5V 4 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3756 Fig.2 outline dimensions 3 |
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